发明名称 Semiconductor memory device having complete hidden refresh function
摘要 In a DRAM having a complete hidden refresh function, when data refresh is to be carried out in an active mode, a signal for selecting a way is set to an "H" level and then reset to an "L" level at each cycle while the corresponding upper address is designated. When data refresh is to be carried out in a standby mode, the signal for selecting the way is maintained at an "H" level and is not reset to an "L" level while the corresponding upper address is designated. This can reduce the standby current.
申请公布号 US7447098(B2) 申请公布日期 2008.11.04
申请号 US20070976354 申请日期 2007.10.24
申请人 RENESAS TECHNOLOGY CORP. 发明人 TSUKUDE MASAKI
分类号 G11C7/00 主分类号 G11C7/00
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