发明名称 |
SEMICONDUCTOR DEVICE AND THE METHOD OF LAYOUT FOR SEMICONDUCTOR DEVICE |
摘要 |
<p>A semiconductor device and the method of layout for a semiconductor device are provided to prevent the offset increment of the bit line sense AMP of the semiconductor device by improving the active critical region uniformity of transistor. The semiconductor device includes the signal line(SL); a plurality of gates formed between a plurality of bit lines which are parallel to the signal line. One end of the plurality of gates is commonly extended and forms the contact gate region(G) connected to the signal line. The contact gate(CG) domain has a width in order to have an interval from the gate equal to an interval between each gate. The semiconductor device has a dummy bit line parallel to the signal line between the bit line which is adjacent to the signal line.</p> |
申请公布号 |
KR20080097096(A) |
申请公布日期 |
2008.11.04 |
申请号 |
KR20070042248 |
申请日期 |
2007.04.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, WON JOHN;LEE, GA YOUNG |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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