| 摘要 |
<p>A semiconductor device and a logic gate included the same are provided to prevent the degradation of circuit quality by reducing the output loading according to connection between transistors. A semiconductor device includes the first MOS transistor group of the finger structure which has the common gate and common drain(60); the second MOS transistor group of the finger structure which has the common gate and common source. The source of each first MOS transistor and drain of each second MOS transistor are connected to be corresponded with one to one. The first and the second MOS transistors are the respective NMOS transistor(N41,N42,N51,N52).</p> |
