| 摘要 |
The property of noise index and the maximum oscillation frequency can be improved by suppressing the electric current resistance generated between the base electrode and emitter electrode. A step is for forming the buried zone(202) on the silicon substrate(201) and for providing the semiconductor substrate in which the collector sinker(204) is separated from the first conductor layer(203) by the element isolation film(205). A step is for coating successively the first insulating layer(207), and the 2,3 conductive layers(208,209) and the second insulating layer(210) on the surface of the semiconductor substrate. A step is for forming the emitter aperture part to exposure the first insulating layer by etching the second insulating layer and 2,3 conductive layer. A step is for forming the side wall insulating film(212) having the constant thickness on the inner surface of the emitter aperture and for exposing the part of the first conductive layer by etching selectively the first insulating layer. A step is for forming the base layer(213) in the surface of the first conductor layer to expose outwardly through the emitter aperture part. A step is for forming the base electrode and emitter electrode by etching the base-emitter as the fourth conducting layer(214) and the second insulating layer. A step is for forming the collector electrode by etching the collector mask as the 2,3 conductive layer and the first insulating layer.
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