| 摘要 |
An exemplary photomask ( 150 ) has a slit. The slit has at least one turning region (D 1 ) and at least one other regions, and the slit at the at least one turning region has a narrower width than the slit at the at least one other regions. An exemplary method for manufacturing a thin film transistor (TFT) using the photomask is also provided.
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