| 摘要 |
The aluminum pad film structure on the copper wiring film is changed into the laminating structure of the TiSiN / Ti / Al / Ti / TiN. Therefore, the diffusion to the aluminum pad film of the copper wiring can be prevented. A Cu wiring layer(208) is deposited in a via hole deposited by a Cu seed layer by using ECP method. The semiconductor substrate is planarized by Cu CMP(Chemical Mechanical Polishing). The aluminum pad film(220) is deposited for the probing of the copper wiring film. The aluminum pad film of the copper wiring film is etched to form desired wiring shape by using a photolithography process.
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