METHOD FOR FORMING THE LIGHT EMITTING DIODE DEVICE

摘要

A method for forming the LED(Light Emitting Diode) device is provided to improve the luminance by minimizing the damage of the first scribing line surface formed by laser through the dry etch. A method for forming the LED(Light Emitting Diode) device includes the step of forming a plurality of light emitting structures in which the n-type nitride semiconductor layer(122) and the active layer and p-type nitride semiconductor layer are sequentially laminated on the top of the substrate; the step of exposing a part of the n-type nitride semiconductor layer by mesa-etching the light emitting structure; the step of forming a light emitting diode wafer(100) by forming a N type electrode(150) and P-contact(140) on a n-type nitride semiconductor layer and a p-type nitride semiconductor layer(126); the step of forming light emitting diode wafer(100); the step of forming the first scribing line of the groove shape, it uses the laser in the upper side of the light emitting diode wafer; the step of forming the second scribing line perpendicularity corresponding to the first scribing line at the lower-part of the light emitting diode wafer; the step of separating to the size of the unit LED element by cutting the light emitting diode wafer using the first and the second scribing lines.