发明名称 APPARATUS FOR TREATING SUBSTRATE AND TREATING METHOD OF SUBSTRATE
摘要 An apparatus for treating substrate and a treating method of substrate are provided to effectively increase the temperature of substrate regardless of the material of the settling portion in which substrate is settled. An apparatus for treating substrate includes the settling portion(40) on which the substrate the substrate(200) is settled; the influx unit(60) connected to the separate space; the outlet part(90) connected to the separate space; the gas supply part(70) which is connected to the influx unit and supplies the gas to the separate space; the heating portion(80) heating up the gas supplied to the separate space. The substrate processing apparatus can effectively increase the temperature of substrate regardless of the material of the settling portion.
申请公布号 KR20080096880(A) 申请公布日期 2008.11.04
申请号 KR20070041719 申请日期 2007.04.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG, IN HO;CHO, YOON JONG;LEE, KYONG CHOL;JIN, JUNG HWA
分类号 H01L21/324 主分类号 H01L21/324
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