| 摘要 |
<p>The method of making mask in the process of manufacturing semiconductor is provided to enhance the pattern fidelity in 90nm or less by applying recipe according to each layout. Desection is performed in consideration of pitch distance(the distance in which layout and spacer are added). Desection is performed on the edge portion in a state that each layout(200,210,220,230) is irregularly arranged. Besides, desection is performed in consideration of 360nm which is two times of the pitch distance.</p> |
