| 摘要 |
In an insulated gate bipolar transistor, an improved safe operating area capability is achieved according to the invention by a two-fold base region comprising a first base region ( 81 ), which is disposed in the channel region ( 7 ) so that it encompasses the one or more source regions ( 6 ), but does not adjoin the second main surface underneath the gate oxide layer ( 41 ), and a second base region ( 82 ) is disposed in the semiconductor substrate ( 2 ) underneath the base contact area ( 821 ) so that it partially overlaps with the channel region ( 7 ) and with the first base region ( 81 ).
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