| 摘要 |
PURPOSE: A light emitting device and a light emitting device system using the same are provided to improve a light emitting efficiency and a wavelength selectivity by forming an ultra-shallow doping region having quantum confinement effect at p-n junction part and using a resonator. CONSTITUTION: The light emitting device comprises a p-type or n-type substrate(11), an ultra-shallow doping region(15) formed at the front surface of the substrate(11), a resonator for improving a wavelength selectivity of light emitted in a p-n junction part(14) and a first and a second electrode(17,19) formed at both surfaces of the substrate(11). At this time, the resonator comprises a first reflective film(21) formed on the first electrode(17) and a second reflective film(25) formed on the doping region(15). Also, the first reflective film(21) has a very high reflectance compared to the first reflective film(25), thereby emitting the lights via the second reflective film(25). |
