| 摘要 |
A manufacturing method of the semiconductor device is provided to improve the property of device by reducing the contact resistance. A manufacturing method of the semiconductor device includes the step of forming the gate electrode(220) which is made of the laminating structure of the gate conductive layer and a hard mask layer at the upper part of the semiconductor substrate(200); the step of forming the interlayer insulating film on the semiconductor substrate on which the gate electrode is equipped; the step of forming a trench by anisotropically etching the interlayer insulating film and the hard mask layer of the bit line contact reserved area; the step of forming the bit line contact hole(250a) which exposes the gate conductive layer and semiconductor board by anisotropically etching the bottom of the trench.
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