| 摘要 |
A plasma processing apparatus includes a chamber for containing a substrate to be processed, a gas supply unit for supplying a processing gas into the chamber, and a microwave introducing unit for introducing plasma generating microwaves into the chamber. The microwave introducing unit includes a microwave oscillator for outputting a plurality if microwaves having specified outputs, and an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted.
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