发明名称 NONVOLATILE MEMORY DEVICE INCLUDING SPARE ARRAY AND BLOCK ERASING METHOD IN THE SAME
摘要 A nonvolatile memory device is provided to improve the reliability of the non-volatile memory device in the erase operation by preventing the NOP increment due to the register of the elimination counter and minimizing the program disturbance. A nonvolatile memory device including spare array and block erasing method is comprised of steps: confirming the address of the block eliminated based on the address and the erase command inputted from host; reading out overhead data already stored in the spare area of the block corresponded to and temporary-saving the red-out data; eliminating the cells of the correspondent block; recording updated data in the spare area(13) after updating the overhead data which is temporarily stored; removing the program disturbance generated in the register stage accomplishment in the main area(11) of the erase block.
申请公布号 KR100866626(B1) 申请公布日期 2008.11.03
申请号 KR20070066076 申请日期 2007.07.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DOO GON;PARK, KI TAE;LEE, YEONG TAEK
分类号 G11C16/16;G11C16/34 主分类号 G11C16/16
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