| 摘要 |
In an oxidation method and an apparatus equipment where a plasma generation chamber having an inlet for an oxidizing gas is coupled with a substrate processing chamber having an exhaust opening and internally provided with a substrate mounting table through a partition board having many through holes, and a plasma of the oxidizing gas introduced into the plasma generation chamber is generated and active species thus created are introduced onto the substrate to form an oxide layer on the surface of the substrate, the partition board is coupled with a power supply through a switching mechanism such that a positive, negative or zero voltage is applied thereto, switching of voltage is performed at least once during oxidation and oxidation is performed while changing the ratios of radicals, positive ions and negative ions in the active species introduced onto the substrate.
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