METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

The processing step can be simplified. Besides, micro-pattern can be formed irrespective of the overlay accuracy of the exposure equipment. The amorphous carbon layer pattern(113) is formed at both sidewalls photoresist pattern and the hard mask film pattern used as the conventional etching mask. And the photoresist pattern and hard mask film pattern are removed. The layer(101) to be etched is etched by using the amorphous carbon layer pattern as the etching mask.