LINE OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

The invention can prevent the increase of void due to the diffusion between the metal layer and increase the thickness of the diffusion barrier. The wiring of the semiconductor device is made of the lower metal wiring, insulating layer(112), diffusion barrier(114), wetting layer(116), metal wiring. The metal wiring is formed on the top of the semiconductor substrate. The insulating layer is formed on the semiconductor substrate including the lower metal wiring(106). The insulating layer has the damascene pattern in which the wiring exposing a part of the lower metal wiring is formed. The diffusion barrier is formed on the damascene pattern surface. The diffusion barrier was made of the ternary phase structure of W-N-B. The wetting layer was made of the formed W2B in the diffusion barrier. The top metal wiring(118) reclaims the damascene pattern on the wetting layer.