| 摘要 |
The capacitor of the peripheral area has the groove of the cross line type in order to increase the capacitance. The present invention discloses the capacitor of the peripheral area. The capacitor(260) of the peripheral area provides the recess gate(250) forming area, the silicon substrate(210), the gate insulating layer(230), the gate conductive film(240). The gate insulating layer was formed on the silicon substrate. The gate insulating layer functions as the dielectric film. The gate conductive film was formed on the gate insulating layer so that groove is filled. The second electrode functions as the gate conductive film.
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