| 摘要 |
PROBLEM TO BE SOLVED: To make a film thickness uniform when a thin film is formed. SOLUTION: There are provided a reaction chamber 6 for accommodating a plurality of substrates 7 stacked in multiple stages in a horizontal direction; a rotation mechanism 20 for rotating the substrates; gas supply members 51, 52 including a gas nozzle 42 extending in a stacking direction of the substrates, for alternately repeatedly supplying first and second processing gas (NH<SB>3</SB>and DCS) from peripheral edge portions of the substrates 7 to the substrates 7; and a gas exhaust member 40 for exhausting inside of the reaction chamber, wherein a supply timing of the processing gas and a rotation speed of the rotation mechanism 20 are controlled, so that a peripheral edge place of the substrates 7 at the time of previously supplying the first processing gas (DCS) to the substrates 7, and a peripheral edge place of the substrates 7 at the time of supplying the first processing gas subsequently, are set as different places. COPYRIGHT: (C)2009,JPO&INPIT
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