| 摘要 |
PROBLEM TO BE SOLVED: To obtain an insulating film, low in dielectric constant useful to the interlayer insulating film or the like of a semiconductor device and high in the mechanical strength. SOLUTION: Diisopropyl divinylsilane, diaryldivinylsilane or the like is used as the material of an insulating film and film is formed through plasma CVD (chemical vapor deposition) method. Accompanying gas which does not contain oxygen such as He, Ar, Kr, Xe, hydrogen, hydrocarbon whose carbon number is 2-6 or the like can be accompanied upon forming the film. The film can be formed by adding porogen such as 1-methyl-4-isopyr-1, 3-cyclohexadiene or the like or the film can be formed by changing high-frequency electric power for generating plasma, the flow rate of film forming gas or a film forming pressure. COPYRIGHT: (C)2009,JPO&INPIT
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