| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS type semiconductor device having a top gate structure capable of improving latch-up withstand without increasing an on voltage, and to provide a method of manufacturing the MOS type semiconductor device. SOLUTION: In the MOS type semiconductor device having a top gate structure, a cathode electrode 21 comes into contact with the surface of the other-conductivity-type base region 3 sandwiched between a one-conductivity-type emitter region 5 and a one-conductivity-type region 2 via a fourth opening 100 provided partially through a gate oxide film 12 covering the surface, a gate electrode 20, and an interlayer insulating film 13. COPYRIGHT: (C)2009,JPO&INPIT
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