| 摘要 |
An integrated circuit device can include a plurality of field effect transistors (FETs) having channel depths no greater than a first depth, and at least a first switch junction FET (JFET) having a source coupled to a signal transmission input node, a drain coupled to a signal transmission output node, and a gate. The first switch JFET has a channel depth greater than the first depth. Switch JFETs can enable low resistance configurable switch paths to be created for interconnecting different portions of a same integrated circuit device.
|
