| 摘要 |
<p>Method of forming a component within a semi-conductor substrate of one conductivity type comprises (a) diffusing an impurity of opposite conductivity type within a surface portion of the substrate (b) forming a dielectric layer over at least a part of the surface portion, the dielectric layer being capable of rejecting the impurity of opposite conductivity type, and (c) diffusing the impurity of opposite conductivity type deeper into the substrate to form a region of opposite conductivity type within the substrate such that the portion of the region directly under the dielectric layer is of higher conductivity than the remaining portion of the region.</p> |
