发明名称 |
METHOD FOR FORMING A PATTERN ON A SUBSTRATE AND ELECTRONIC DEVICE FORMED THEREBY |
摘要 |
<p>The invention relates to a method for forming a pattern on a substrate (S) with an upper surface and a lower surface which comprises the steps of depositing a first layer (E1) of an opaque material on the upper surface of the substrate (S), depositing a photosensitive layer (R) such that part of the photosensitive layer (R) covers at least part of the first layer (E1), exposing the photosensitive layer (R) to a light beam (L), the light beam (L) impinging on the lower surface of the substrate (S) under an oblique angle (F) of incidence, removing the exposed region of the photosensitive layer (R), depositing a second layer (E2) of an opaque material such that part of the second layer (E2) covers a remaining region of the photosensitive layer (R), and removing at least a part of the remaining region of the photosensitive layer (R). According to another aspect of the method of the invention anisotropic plasma etching is applied from above the upper surface of the substrate (S) after removal of the exposed region of the photosensitive layer (R) and thereafter the second layer (E2) is deposited. The method of the invention can be applied for forming a source electrode and a drain electrode of a thin-film field effect transistor. The invention furthermore relates to an electronic device fabricated by such a method.</p> |
申请公布号 |
WO2008128365(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
WO2008CH00163 |
申请日期 |
2008.04.10 |
申请人 |
CIBA HOLDING INC.;BUERGI, LUKAS;PFEIFFER, RETO;WALTER, HARALD;VON MUEHLENEN, ADRIAN |
发明人 |
BUERGI, LUKAS;PFEIFFER, RETO;WALTER, HARALD;VON MUEHLENEN, ADRIAN |
分类号 |
H01L21/027;H01L51/00;H01L51/05;H01L51/10;H01L51/42 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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