| 摘要 |
A semiconductor memory device and a method of fabricating the same are provided to prevent a solution of metal silicide from remaining between wordlines by disposing active regions under the wordlines in a wordline contact region. A semiconductor memory device includes a first and second memory cell; a first active region(AA) for line and space structure; a memory cell array region having a floating gate and control gate electrode in the first active region; a wordline contact region having a second active region, adjacent to the memory cell array region; a first and second wordline disposed in the memory cell array region and word line contact region, served as a control gate electrode for the first and second memory cell. A dummy gate electrode is disposed under the first and second worldline in the second active region.
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