发明名称 SPUTTERING FILM FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND SPUTTERING SYSTEM
摘要 The film formation method is provided to obtain a multilayered film distributed at the one-direction of substrate having the slope rate of film thickness given. The sputtering film formation method includes a step for forming a film on the surface of the substrate(10), which a target is set slantly on a surface of the substrate while the substrate rotates about the perpendicular axis about the substrate surface target, and a step for finishing the formation of film in the predetermined timing from the formation initiation of film and the formation of film is terminated when the substrate rotates as 360 the x n +180 + alpha. Here, it is the natural number including N is 0. -10 is < alpha < 10 degree.
申请公布号 KR20080096424(A) 申请公布日期 2008.10.30
申请号 KR20080038466 申请日期 2008.04.25
申请人 CANON ANELVA CORPORATION 发明人 KITANO NAOMU;YAMADA NAOKI;TSUNODA TAKAAKI;YAMAGUCHI NOBUO;KOSUDA MOTOMU
分类号 H01L21/203 主分类号 H01L21/203
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