发明名称 METHOD FOR DESIGNING MASK PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DESIGN PROGRAM
摘要 <P>PROBLEM TO BE SOLVED: To calculate a systematic yield in a short time. <P>SOLUTION: A method for designing a mask pattern includes steps of: (S101 to S109) dividing the design layout data of a pattern into a plurality of regions and extracting a region from the plurality of regions where a transferred dimension obtained by transfer simulation of the pattern exceeds a predetermined allowance; (S110) setting a process window where a plurality of transfer conditions is individually changed for the pattern data in the region extracted in the above step and calculating transfer dimensions obtained by transfer simulation under each transfer condition of the process window; and (S111 to S113) extracting a transfer condition with which a transfer dimension obtained by transfer simulation under each transfer condition in the process window exceeds a predetermined allowance and calculating a yield from the probability of occurrence of the transfer condition. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008262014(A) 申请公布日期 2008.10.30
申请号 JP20070104424 申请日期 2007.04.12
申请人 SONY CORP 发明人 OISHI HIDETOSHI;OKA MIKIO
分类号 G03F1/36;G03F1/68;G03F1/70;H01L21/027 主分类号 G03F1/36
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