| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve current increase effects by increasing a stress to be applied to a channel section of a transistor. <P>SOLUTION: A semiconductor device is provided with side wall insulating films 33, 53, which have grooves 39, 59 formed by removing a dummy gate and are formed on a semiconductor substrate 11; gate electrodes 43, 63 formed in the grooves 39, 59 through a gate insulating film 41; first and second stress applying films 21, 22, which are formed onto the semiconductor substrate 11 from above the side wall insulating films 33, 53, respectively; and source/drain regions 35, 36, 55, 56, which are formed on semiconductor substrate 11 on both sides of the gate electrodes 43, 63. The stress applying films 21, 22 are formed before the first groove 39 and the second groove 59 are formed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
