发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device for setting an efficient writing voltage. <P>SOLUTION: A test circuit relating to a write test sequence is equipped with: a first counter for counting the number of loops for each page writing; a second counter for counting the number of accumulated loops required for the selected all pages writing; a divider for obtaining the average number of loops by dividing the number of accumulated loops by the number of selected all pages; an adder for obtaining a difference amount between the average number of loops and its expected value; and a decision circuit for deciding a suitability or otherwise, of initialized value of writing voltage which is set based on the difference amount. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008262623(A) 申请公布日期 2008.10.30
申请号 JP20070103606 申请日期 2007.04.11
申请人 TOSHIBA CORP 发明人 OTAKE HIROYUKI;YAMAMURA TOSHIO;HORIKAWA HIDEO;OZAKI TAIICHI
分类号 G11C29/50;G11C16/02;G11C16/04;G11C29/44 主分类号 G11C29/50
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