发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device for setting an efficient writing voltage. <P>SOLUTION: A test circuit relating to a write test sequence is equipped with: a first counter for counting the number of loops for each page writing; a second counter for counting the number of accumulated loops required for the selected all pages writing; a divider for obtaining the average number of loops by dividing the number of accumulated loops by the number of selected all pages; an adder for obtaining a difference amount between the average number of loops and its expected value; and a decision circuit for deciding a suitability or otherwise, of initialized value of writing voltage which is set based on the difference amount. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2008262623(A) |
申请公布日期 |
2008.10.30 |
申请号 |
JP20070103606 |
申请日期 |
2007.04.11 |
申请人 |
TOSHIBA CORP |
发明人 |
OTAKE HIROYUKI;YAMAMURA TOSHIO;HORIKAWA HIDEO;OZAKI TAIICHI |
分类号 |
G11C29/50;G11C16/02;G11C16/04;G11C29/44 |
主分类号 |
G11C29/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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