| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid which can achieve a high polishing rate for metal, a low etching rate and a reduced polishing friction, to adapt for producing a semiconductor device having a metal interconnection of a reduced dishing and erosion with a high productivity. <P>SOLUTION: The polishing liquid contains (1) an oxidizing agent, (2) a metal oxide dissolving agent, (3) an anti-corrosive agent for metal, and water, the polishing liquid having a pH of 2 to 5, in which (3) the anti-corrosive agent for metal contains one or more selected from the group consisting of: one or more selected from the group consisting of aromatic compounds having a triazole skeleton, aliphatic compounds having a triazole skeleton, compounds having a pyrimidine skeleton, compounds having an imidazole skeleton, compounds having a guanidine skeleton, compounds having a thiazole skeleton, and compounds having a pyrazole skeleton. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
