| 摘要 |
PROBLEM TO BE SOLVED: To perform focusing and shaping suitable for a beam scanner regardless of a cross-sectional shape of an ion beam of an ion implanting device. SOLUTION: The ion implanting device is composed of an ion source 10, a mass-spectrometry magnet unit 22, a mass-spectrometry slit 28, and a beam scanner 36 or the like. A first quadrupole vertical focusing electromagnet 24 is provided in a section from an exit of the mass-spectrometry magnet unit through a beam line before an incident of the mass-spectrometry slit, and a second quadrupole vertical focusing electromagnet 30 having a larger effective magnetic field effect than the first quadrupole vertical focusing electromagnet in a section from an exit of the mass-spectrometry slit through a beam line before an incident of the beam scanner, and the focusing and shaping of the ion beam are performed. Concretely, a length in the second quadrupole vertical focusing electromagnet 24 in an ion beam progressing direction is set to be longer than in the first quadrupole vertical focusing electromagnet. As a result, an ion beam focusing force by the second quadrupole vertical focusing electromagnet becomes larger than a focusing force of the first quadrupole vertical focusing electromagnet. COPYRIGHT: (C)2009,JPO&INPIT
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