发明名称 HYBRID SUBSTRATES AND METHODS FOR FORMING SUCH HYBRID SUBSTRATES
摘要 Hybrid substrates characterized by semiconductor islands of different crystal orientations and methods of forming such hybrid substrates. The methods involve using a SIMOX process to form an insulating layer. The insulating layer may divide the islands of at least one of the different crystal orientations into mutually aligned device and body regions. The body regions may be electrically floating relative to the device regions.
申请公布号 WO2008128897(A2) 申请公布日期 2008.10.30
申请号 WO2008EP54306 申请日期 2008.04.09
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;CANNON, ETHAN, HARRISON;FURUKAWA, TOSHIHARU;GAUDIELLO, JOHN, GERARD;HAKEY, MARK, CHARLES;HOLMES, STEVEN, JOHN;HORAK, DAVID, VACLAV;KOBURGER III, CHARLES, WILLIAM;MANDELMAN, JACK, ALLAN;TONTI, WILLIAM, ROBERT 发明人 CANNON, ETHAN, HARRISON;FURUKAWA, TOSHIHARU;GAUDIELLO, JOHN, GERARD;HAKEY, MARK, CHARLES;HOLMES, STEVEN, JOHN;HORAK, DAVID, VACLAV;KOBURGER III, CHARLES, WILLIAM;MANDELMAN, JACK, ALLAN;TONTI, WILLIAM, ROBERT
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