| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element such as a light emitting element or a diode wherein a substrate whose lattice constant and thermal expansion coefficient conform with those of group III-V nitride is used and a group III-V nitride single crystal film having excellent crystallinity is grown on the substrate. <P>SOLUTION: The semiconductor element is formed by forming single crystal films 12, 14 and 15 on a group III-V nitride single crystal substrate 11 directly or through a low temperature buffer layer 13 of the group III-V nitride by a MOCVD method. Wherein, the films are at least one kind of the group III-V nitride selected among aluminum nitride, boron nitride, indium nitride and these mixed crystal and the substrate contains a transition metal of ≥10 ppb and ≤0.1 mol% and has a half-value width of rocking curve by an X-ray diffraction of ≤1.5 min and comprises a polishing face whose main face is perpendicular to cleavage face (0001) or (1-100). <P>COPYRIGHT: (C)2009,JPO&INPIT |
