发明名称 |
DEPOSITION METHODS FOR BARRIER AND TUNGSTEN MATERIALS |
摘要 |
Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.
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申请公布号 |
US2008268636(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20080171132 |
申请日期 |
2008.07.10 |
申请人 |
YOON KI HWAN;CHA YONGHWA CHRIS;YU SANG HO;AHMAD HAFIZ FAROOQ;WEE HO SUN |
发明人 |
YOON KI HWAN;CHA YONGHWA CHRIS;YU SANG HO;AHMAD HAFIZ FAROOQ;WEE HO SUN |
分类号 |
H01L21/768;C23C14/56;C23C16/06;C23C16/54;H01L21/285 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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