发明名称 |
Structure and method for self protection of power device with expanded voltage ranges |
摘要 |
A vertical semiconductor power device includes a top surface and a bottom surface of a semiconductor substrate constituting a vertical current path for conducting a current there through. The semiconductor power device further includes an over current protection layer composed of a material having a resistance with a positive temperature coefficient (PTC) and the over current protection layer constituting as a part of the vertical current path connected to a source electrode and providing a feedback voltage a gate electrode of the vertical semiconductor power device for limiting a current passing there through for protecting the semiconductor power device at any voltage.
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申请公布号 |
US2008265326(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20080156305 |
申请日期 |
2008.05.31 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD |
发明人 |
HEBERT FRANCOIS |
分类号 |
H01L23/62;H02H9/00 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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