发明名称 |
Method of Forming a Fully Silicided Semiconductor Device with Independent Gate and Source/Drain Doping and Related Device |
摘要 |
A method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a substrate (the gate stack comprising a polysilicon layer and a blocking layer), and performing an ion implantation into an active region of the substrate adjacent to the gate stack (the blocking layer substantially blocks the ion implantation from the polysilicon layer).
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申请公布号 |
US2008265345(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20080135910 |
申请日期 |
2008.06.09 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
YU SHAOFENG;MEHRAD FREIDOON;LU JIONG-PING |
分类号 |
H01L49/00 |
主分类号 |
H01L49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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