Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same

摘要

In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm^-3 or less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.