| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which erroneous operation hardly occur even if noise or the like is applied to a gate electrode by making a threshold voltage high. SOLUTION: The semiconductor device comprises a channel region having a heterojunction of a first semiconductor region of a gallium nitride or an indium gallium nitride and a second semiconductor region of an indium aluminum nitride, a gate electrode facing the heterojunction from one side of the channel region, and a third semiconductor region of a gallium nitride containing a p-type impurity and facing the heterojunction from the other side of the channel region. The direction of piezo polarization generated in the second semiconductor region is adjusted to be a direction moving away from the heterojunction. COPYRIGHT: (C)2009,JPO&INPIT
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