| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a bonded wafer by an ion implanting separation method wherein damage caused by ion implantation can be eliminated and the occurrence of concave defects can be suppressed on the surface of a thin film of a bonded wafer after separation without spoiling surface roughness. SOLUTION: In the method of manufacturing the bonded wafer by the ion implanting separation method, a first process is performed wherein a protection film is formed on the surface of the thin film of the bonded wafer after separating the bond wafer, and then a second process is performed wherein the bonded wafer is heat-treated in a non-oxidizing gas atmosphere. Then, a third process is performed wherein, after forming a thermally-oxidized film on the surface layer of the bonded wafer by heat-treating the bonded wafer in an oxidizing gas atmosphere, the thermally-oxidized film and the protection film are removed. Thereafter, a fourth process is performed wherein the bonded wafer is heat-treated again in a non-oxidizing gas atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
|
