| 摘要 |
PROBLEM TO BE SOLVED: To allow additional modification of a semiconductor integrated circuit in a simple step without the need for mask modification and the like. SOLUTION: In a semiconductor integrated circuit comprising a multilayer metal wiring layer, a standard cell 11, and a filler cell 61 including a PMOS transistor M1 and an NMOS transistor M2, the filler cell 61 has a layout pattern capable of changing the connection of a gate terminal, a drain terminal and a source terminal on the PMOS transistor M1 as well as the connection of a gate terminal, a drain terminal and a source terminal on the NMOS transistor M2 without changing the layout forms of the PMOS transistor M1 and the NMOS transistor M2 by modifying the wiring of the multilayer metal wiring layer. COPYRIGHT: (C)2009,JPO&INPIT
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