发明名称 |
Semiconductor Device and Method for Manufacturing the Same |
摘要 |
A semiconductor device according to an embodiment can include a first group of dummy patterns and a second group of dummy patterns spaced apart from the first group of dummy patterns by a second spacing. The first group of dummy patterns can include a plurality of first dummy patterns formed separated from each other by a first spacing. The second group of dummy patterns can include a plurality of second dummy patterns formed separated from each other by the first spacing. The first dummy patterns and the second dummy patterns can have the same shape and size.
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申请公布号 |
US2008265425(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20070842562 |
申请日期 |
2007.08.21 |
申请人 |
LEE SANG HEE;CHO GAB HWAN |
发明人 |
LEE SANG HEE;CHO GAB HWAN |
分类号 |
H01L21/4763;G03F1/00;G03F1/68;H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L23/48;H01L23/522;H01L27/04 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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