发明名称 Semiconductor Device and Method for Manufacturing the Same
摘要 A semiconductor device according to an embodiment can include a first group of dummy patterns and a second group of dummy patterns spaced apart from the first group of dummy patterns by a second spacing. The first group of dummy patterns can include a plurality of first dummy patterns formed separated from each other by a first spacing. The second group of dummy patterns can include a plurality of second dummy patterns formed separated from each other by the first spacing. The first dummy patterns and the second dummy patterns can have the same shape and size.
申请公布号 US2008265425(A1) 申请公布日期 2008.10.30
申请号 US20070842562 申请日期 2007.08.21
申请人 LEE SANG HEE;CHO GAB HWAN 发明人 LEE SANG HEE;CHO GAB HWAN
分类号 H01L21/4763;G03F1/00;G03F1/68;H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L23/48;H01L23/522;H01L27/04 主分类号 H01L21/4763
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