PROCESS FOR PRODUCING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE

摘要

Insulating film (3) of refractive index (n) and amorphous silicon film (4) are sequentially deposited on translucent substrate (1). The amorphous silicon film (4) on its side facing the insulating film (3) is irradiated with laser beam (LS) of wavelength (?) having a band-shaped beam extending in the length direction multiple times while the position of irradiation is displaced by distance (PT) smaller than the width size of the band configuration in the width direction of the band configuration. As a result, polycrystalline silicon film (6) is formed from the amorphous silicon film (4). The step of forming the polycrystalline silicon film (6) is carried out so as to produce not only crystal grain boundaries (BW) extending in the width direction, disposed at longitudinal average intervals of (?/n)x0.95 to (?/n)x1.05 but also, provided in each region between mutually adjacent crystal grains extending in the width direction, crystal grain boundaries (BL) extending in the direction of the length, disposed at width-direction average intervals of (?/n)x0.95 to (?/n)x1.05.