| 摘要 |
<p>A method of patterning a substrate that includes: a) mechanically locating a first masking film over the substrate; b) segmenting the first masking film into a first masking portion and first contiguous opening portions in first locations; c) mechanically removing the one or more first contiguous opening portions; d) depositing first materials over the substrate in the first locations to form first patterned areas; e) mechanically locating a second masking film over the substrate and first masking portions; f) segmenting the second masking film and first masking portion into a second masking portion and second contiguous opening portions, wherein the second contiguous opening portions are in second locations over the substrate, yet different from the first locations; g) mechanically removing the second contiguous opening portions; and h) depositing second materials over the substrate in the second locations to form second patterned areas.</p> |
