发明名称 INTEGRATED CIRCUIT SYSTEM EMPLOYING STRESS MEMORIZATION TRANSFER
摘要 <p>INTEGRATED CIRCUIT SYSTEM EMPLOYING STRESS MEMORIZATION TRANSFER An integrated circuit system that includes: providing a gate and a spacer formed over a substrate; performing an implant that amorphizes the gate and a source/drain region defined by the spacer; removing the spacer; depositing a stress memorization layer over the integrated circuit system; and transferring a stress from the stress memorization layer to the gate and the source/drain region.</p>
申请公布号 SG146527(A1) 申请公布日期 2008.10.30
申请号 SG20080014128 申请日期 2008.02.20
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 BOONE QUEK ELGIN KIOK;YELEHANKA PRADEEP RAMACHANDRAMURTHY
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