发明名称 |
INTEGRATED CIRCUIT SYSTEM EMPLOYING STRESS MEMORIZATION TRANSFER |
摘要 |
<p>INTEGRATED CIRCUIT SYSTEM EMPLOYING STRESS MEMORIZATION TRANSFER An integrated circuit system that includes: providing a gate and a spacer formed over a substrate; performing an implant that amorphizes the gate and a source/drain region defined by the spacer; removing the spacer; depositing a stress memorization layer over the integrated circuit system; and transferring a stress from the stress memorization layer to the gate and the source/drain region.</p> |
申请公布号 |
SG146527(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
SG20080014128 |
申请日期 |
2008.02.20 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
BOONE QUEK ELGIN KIOK;YELEHANKA PRADEEP RAMACHANDRAMURTHY |
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