发明名称 |
SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE AND METHOD |
摘要 |
Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.
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申请公布号 |
US2008265282(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20070741836 |
申请日期 |
2007.04.30 |
申请人 |
GLUSCHENKOV OLEG;KRISHNASAMY RAJENDRAN;SCHONENBERG KATHRYN T |
发明人 |
GLUSCHENKOV OLEG;KRISHNASAMY RAJENDRAN;SCHONENBERG KATHRYN T. |
分类号 |
H01L31/11;H01L21/331;H01L31/00;H01L31/117 |
主分类号 |
H01L31/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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