| 摘要 |
Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The memory cell's reset current can be double a set current, causing peak currents to depend on write data. When all data bits are reset to the amorphous state, a very high peak current is required. To reduce this worst-case peak current, the data is encoded before storage in the PCM cells. An 8/10 encoder adds 2 bits but ensures that no more than half of the data bits are reset. An 8/9 encoder adds an indicator bit, and inverts the 8 bits to ensure that no more than half of the bits are reset. The indicator bit indicates when the 8 bit are inverted, and when the 8 bits are uninverted. Peak currents are thus reduced by encoding to reduce reset data bits.
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