发明名称 |
METHODS FOR FABRICATING A CAPACITOR |
摘要 |
A method for forming a capacitor comprises providing a substrate. A bottom electrode material layer is formed on the substrate. A first mask layer is formed on the bottom electrode material layer. A second mask layer is formed on the first mask layer. The second mask layer is patterned to form a patterned second mask layer in a predetermined region for formation of a capacitor. A plurality of hemispherical grain structures are formed on a sidewall of the patterned second mask layer. The first mask layer is etched by using the hemispherical grain structures and the patterned second mask layer as a mask, thereby forming a patterned first mask layer having a pattern. The pattern of the first mask layer is transferred to the bottom electrode material layer. And, a capacitor dielectric layer and a top electrode layer are formed on the bottom electrode material layer to form the capacitor.
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申请公布号 |
US2008268593(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20080168016 |
申请日期 |
2008.07.03 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LEE HENGYUAN;LEE LURNG-SHEHNG;WANG CHING CHIUN;TZENG PEI-JER |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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