| 发明名称 |
Halbleitervorrichtung und Verfahren zu deren Herstellung |
| 摘要 |
Cut faces 15 a to 15 h are formed on the front end faces 13 a to 13 h of the exposed portions 12 a to 12 h of respective lead terminals 11 a to 11 h of a semiconductor device 100, and plating for increasing the solderability is provided on the cut faces 15 a to 15 h. |
| 申请公布号 |
DE10297264(B4) |
申请公布日期 |
2008.10.30 |
| 申请号 |
DE2002197264 |
申请日期 |
2002.09.27 |
| 申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
SAKAKIBARA, MASAYUKI;MORISHITA, MASARU |
| 分类号 |
H01L21/56;H01L23/50;H01L21/48;H01L21/50;H01L23/12;H01L23/28;H01L23/31;H01L23/495;H01L23/498;H05K3/34 |
主分类号 |
H01L21/56 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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