发明名称 |
STRUCTURE AND PROCESS TO PREVENT PEELING OF REACTION PRODUCT IN SEMICONDUCTOR DEVICE MANUFACTURE |
摘要 |
<p>The peeling of a reaction product deposition film (50) is prevented, reducing the particle contamination of a material to be treated (16) by roughening the surfaces (adhesion preventing surfaces) of an outer liner (40) and inner liner (42) both made of aluminum installed as an adhesion preventing plate inside a chamber of a plasma etching device to a surface roughness within a constant range without carrying out alumite treatment.</p> |
申请公布号 |
WO2008131402(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
WO2008US61215 |
申请日期 |
2008.04.23 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;SHISHIKURA, HIROTSUGU |
发明人 |
SHISHIKURA, HIROTSUGU |
分类号 |
H01L21/3065;H01L21/00;H01L21/02 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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