Doping zone producing method for semiconductor body, involves executing short-time heat treatment at one temperature, and executing longer heat treatment at another temperature for forming doping zone

摘要

The method involves providing a semiconductor body (1). A dopant (2) is introduced into the semiconductor body, where the dopant is sulphur, selenium, Indium or antimony. A short-time heat treatment is executed at a temperature. Another heat treatment which is longer that the former heat treatment is executed at another temperature for forming a doping zone, where the former temperature is higher than the latter temperature. The former heat treatment is executed in such a manner that no diffusion of the dopant takes place in the semiconductor body.